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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3962 DESCRIPTION With TO-220C package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector dissipation Collector-base voltage Collector-emitter voltage E SEM NG Open base OND IC CONDITIONS TOR UC VALUE 500 400 7 5 10 2 UNIT V V V A A A W ae ae Open emitter Emitter-base voltage Open collector Collector current-peak TC=25ae 40 150 -55~150 Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC3962 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 400 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ; IE=0 IE=1mA ; IC=0 500 V Emitter-base breakdown voltage 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.3 V ICBO Collector cut-off current VCB=500V ;IE=0 100 |I A IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current gain IC=0.5A ; VCE=5V CHA IN E SEM NG OND IC TOR UC 15 50 100 |I A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3962 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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